Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor
نویسندگان
چکیده
منابع مشابه
Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of polycrystalline-Si thin-film transistors
Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of poly-Si TFT have been studied. For a LDD implantation dose of 2–4 × 1013 cm−2, no significantly large difference in on-state current and off-state leakage is found. For a LDD implantation energy of 50–100 keV, however, the higher LDD implantation energy results in smaller off-state leakage and more re...
متن کاملHigh-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...
متن کاملTemperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is conf...
متن کاملThe effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: [email protected] (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the elec...
متن کاملFabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor
In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Membranes
سال: 2021
ISSN: 2077-0375
DOI: 10.3390/membranes11020103